inchange semiconductor isc product specification isc silicon pnp power transistor MJ21193 description t otal harmonic distortion characterized high dc current gain high area of safe operation applications designed for high power audio outpu t, disk head positioners and linear applications. absolute maximum ratings(ta=25 ) symbol parameter value unit v cbo collector-emitter voltage -400 v v ceo collector-emitter voltage -250 v v ebo emitter-base voltage -5 v i c collector current-continuous -16 a i cm collector current-pulsed -30 a i b b base current-continuous -5 a p d total power dissipation (t c =25 ) 250 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermalresistance junction to case 0.7 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor MJ21193 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =-100ma; i b =0 b -250 v v ce (sat)-1 collector-emitter saturation voltage i c =-8a ;i b =-0.8a b -1.4 v v ce (sat)-2 collector-emitter saturation voltage i c =-16a ;i b =-3.2a -4 v v be (on) base-emitter on voltage i c =-8a ; v ce =-5v -2.2 v i ceo collector cutoff current v ce =-200v,i b =0 -0.1 ma i cex collector cutoff current v ce = -250v; v be(off) = -1.5v -0.1 ma i ebo emitter cutoff current v eb =-5v; i c =0 -100 a h fe-1 dc current gain i c =-8a; v ce =-5v 25 75 h fe-2 dc current gain i c =-16a; v ce =-5v 8 c ob collector capacitance i e = 0; f=1mhz ; v cb =-10v 500 pf f t current gain-bandwidth product i c =-1a ;v ce =-10v; f test =1mhz 4 mhz isc website www.iscsemi.cn 2
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